NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce operating power of a nonvolatile semiconductor memory device.

SOLUTION: The nonvolatile semiconductor memory device includes a memory cell (MC) in which there are connected in series: an upper electrode (TE) and barrier metals (BM1, BM2) each formed of a TiN layer; a variable resistance element (VR) comprising a metal oxide HfOx layer; a lower electrode (BE) comprising a polysilicon layer and an SiGe layer formed at an interface between the polysilicon layer and the metal oxide HfOx layer; and a bipolar type current rectifying element (Di) formed of an NIP layer.

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