| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate having a buffer layer structure which is improved for growing a semiconductor laminate structure for a nitride semiconductor device. <P>SOLUTION: The manufacturing method of a substrate having a buffer layer structure for growing a nitride semiconductor layer comprises the processes of: depositing a first AlN buffer layer (2a) at a substrate temperature within a range of 600°C or higher and 900°C or lower on a (111) principal plane of a Si single crystal substrate (1); and depositing a second AlN buffer layer (2b) at a substrate temperature exceeding 900°C on the first AlN buffer layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
