发明名称 |
B-SIALON AND METHOD OF MANUFACTURING THEREOF, AND LIGHT-EMITTING DEVICE |
摘要 |
beta-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the beta-SiAlON includes: a mixing step of mixing beta-SiAlON materials; a baking step of baking the beta-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C/min.; an annealing step of annealing the beta-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the beta-SiAlON having undergone the annealing step. The objective of the present invention is to provide beta-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the beta-SiAlON, and a light-emitting device using the beta-SiAlON.
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申请公布号 |
US2013093314(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201113704772 |
申请日期 |
2011.07.28 |
申请人 |
TAKEDA GO;HASHIMOTO HISAYUKI;ICHIKAWA MASAYOSHI;NOMIYAMA TOMOHIRO;YAMADA SUZUYA;DENKI KAGAKU KOGYO KABUSHIKI KAISHA |
发明人 |
TAKEDA GO;HASHIMOTO HISAYUKI;ICHIKAWA MASAYOSHI;NOMIYAMA TOMOHIRO;YAMADA SUZUYA |
分类号 |
C09K11/77;H05B33/12 |
主分类号 |
C09K11/77 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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