METHOD FOR ETCHING EUV REFLECTIVE MULTI-MATERIAL LAYERS UTILIZED TO FORM A PHOTOMASK

摘要

A method and apparatus for etching photomasks are provided herein. In one embodiment, a forming gas use utilized to remove a mask layer utilized film stack having a multi-material layer having at least two different materials. In another embodiment, a method of etching a multi-material layer disposed on a photomask includes providing a film stack in an etching chamber, the film stack having a multi-material layer having at least two different materials disposed therein partially exposed through a patterned layer, providing a gas mixture including at least one fluorine containing gas and an oxygen containing gas in to a processing chamber, supplying a RF power in the gas mixture to form a plasma, and etching the multi-material layer through the patterned layer.