发明名称 DEPOSITION APPARATUS AND SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To suppress the supply flow rate of a separation gas while supplying the separation gas to areas between processing regions to which process gases are supplied and preventing the process gases from mixing with each other in a processing atmosphere when the processing gases, reacting with each other, are sequentially supplied to laminate reaction products on a surface of a substrate. <P>SOLUTION: Separation gas nozzles 41, 42 are disposed between a process region P1 and a process region P2, and a separation gas is supplied from the respective separation gas nozzles 41, 42 to separate the process region P1 from the process region P2. At that time, a first ceiling surface 44 for forming a narrow space S1 between itself and an upper surface of a rotation table 2 is provided on the downstream side in the rotation direction of the rotation table 2 at the separation gas nozzles 41, 42. Further, a second ceiling surface 45, which is higher than the first ceiling surface 44, is provided on the upstream side in the rotation direction of the rotation table 2 at the first ceiling surface 44 so as to be located adjacent to the first ceiling surface 44. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013069909(A) 申请公布日期 2013.04.18
申请号 JP20110207990 申请日期 2011.09.22
申请人 TOKYO ELECTRON LTD 发明人 ENOMOTO TADASHI
分类号 H01L21/205;C23C16/455 主分类号 H01L21/205
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