发明名称 |
FINFET DEVICE AND METHOD OF MANUFACTURING SAME |
摘要 |
A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a fin structure including one or more fins disposed on the substrate. The semiconductor device further includes a dielectric layer disposed on a central portion of the fin structure and traversing each of the one or more fins. The semiconductor device further includes a work function metal disposed on the dielectric layer and traversing each of the one or more fins. The semiconductor device further includes a strained material disposed on the work function metal and interposed between each of the one or more fins. The semiconductor device further includes a signal metal disposed on the work function metal and on the strained material and traversing each of the one or more fins.
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申请公布号 |
US2013092984(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201113272305 |
申请日期 |
2011.10.13 |
申请人 |
LIU CHI-WEN;WANG CHAO-HSIUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU CHI-WEN;WANG CHAO-HSIUNG |
分类号 |
H01L29/772;H01L21/336 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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