| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently form a film of a third group nitride semiconductor on a substrate and improve uniformity of the formed film. <P>SOLUTION: A nitride semiconductor crystal growth device 100 comprises: a nitrogen-containing gas supply port 8; a third group metal containing gas supply port 9; and a catalyst material 1 which decomposes a nitrogen-containing gas 6 and generates an active species. The catalyst material 1 is provided inside and such of the nitrogen-containing gas supply port 8. Both of the nitrogen-containing gas supply port 8 and the third group metal containing gas supply port 9 normally face a substrate surface. <P>COPYRIGHT: (C)2013,JPO&INPIT |
