发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A transistor which includes an oxide semiconductor and can operate at high speed is provided. A highly reliable semiconductor device including the transistor is provided. An oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer formed in a groove of a base insulating layer. The channel formation region is embedded in a position overlapping with a gate electrode which has a side surface provided with a sidewall. The groove includes a deep region and a shallow region. The sidewall overlaps with the shallow region, and a connection portion between a wiring and the electrode layer overlaps with the deep region. |
申请公布号 |
US2013092926(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201213632761 |
申请日期 |
2012.10.01 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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