| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which improves a processing margin of a memory cell array. <P>SOLUTION: A manufacturing method of a nonvolatile semiconductor storage device related to one embodiment comprises the steps of: sequentially laminating a film which is first wiring extending in a first direction, a film which is a first non-ohmic element and a film which is a first variable resistive element made of a metal material on a semiconductor substrate; dividing the film which is the first variable resistive element and the film which is the first non-ohmic element into a plurality of portions in a lamination direction thereof and in a second direction intersecting with the first direction; forming a first interlayer insulation film between the film which is the first variable resistive element and the film which is the first non-ohmic element divided into the plurality of portions in the second direction; flattening top faces of the film which is the first variable resistive element and the first interlayer insulation film; oxidizing the metal material of the film which is the first variable resistive element; and sequentially laminating a film which is a first upper electrode and a film which is second wiring extending in the second direction on the film which is the first variable resistive element and the first interlayer insulation film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
