Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities

摘要

A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 10 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film is tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate is patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film.