| 摘要 |
The disclosed light emitting diode (100) includes a light emitting structure (140) including a first-conductivity-type semiconductor layer (146), an active layer (144), and a second-conductivity-type semiconductor layer (142), a second electrode layer (130) disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer (142), a first electrode layer (120) including a main electrode (120a) disposed beneath the second electrode layer, and at least one contact electrode (120b) branching from the main electrode and extending through the second electrode layer (130), the second-conductivity-type semiconductor layer (142) and the active layer (144), to contact the first-conductivity-type semiconductor layer (146), and an insulating layer (170) interposed between the first electrode layer (120) and the second electrode layer (130) and between the first electrode layer and the light emitting structure (140). The first-conductivity-type semiconductor layer (146) includes a first region (148a) and a second region (148b) having a smaller height than the first region, and the first region (148a) overlaps with the contact electrode (120b). |
