| 摘要 |
PURPOSE: A semiconductor device and a method for forming the same are provided to prevent the extension of the lower part of a contact hole by using a material having a different etching selectivity, thereby improving the reliability of the semiconductor device. CONSTITUTION: First sacrificial dielectric layers(102) are formed on a semiconductor substrate(100). Second sacrificial dielectric layers(104) are formed between the first sacrificial dielectric layers. The etching selectivity of the second sacrificial dielectric layers is lower than the etching selectivity of the first sacrificial dielectric layers. Third sacrificial dielectric layers(106) are formed in the upper part the first sacrificial dielectric layers and the second sacrificial dielectric layers. A first store electrode region(110a) passes through the third sacrificial dielectric layers. A second store electrode region(110b) passes through the second sacrificial dielectric layers.
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