发明名称 |
Field effect transistor having MOS structure made of nitride compound semiconductor |
摘要 |
A semiconductor layer of a second conductive type is formed on a RESURF layer of a first conductive type that is formed on a buffer layer. A contact layer of the first conductive type is formed in or on the semiconductor layer. A source electrode is formed on the contact layer. A drain electrode is formed on the RESURF layer. A gate insulating film is formed on the semiconductor layer to overlap with an end of the semiconductor layer. A gate electrode is formed on the gate insulating film to overlap with the end of the semiconductor layer. A channel formed near the end of the semiconductor layer is electrically connected to the RESURF layer. |
申请公布号 |
US8421182(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US20090639199 |
申请日期 |
2009.12.16 |
申请人 |
NOMURA TAKEHIKO;YOSHIDA SEIKOH;KATO SADAHIRO;FURUKAWA ELECTRIC CO., LTD. |
发明人 |
NOMURA TAKEHIKO;YOSHIDA SEIKOH;KATO SADAHIRO |
分类号 |
H01L31/062 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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