| 摘要 |
A problem is arisen in conventional J-FETs that a shifting in a threshold voltage (VT) is generated before or after an energization with a gate current. A junction gate field effect transistor (J-FET) according to the present invention includes an undoped InGaAs channel layer 5, which is capable of accumulating carrier of a first conductivity type, a p+ type GaAs layer 17 (semiconductor layer), which is provided on the undoped InGaAs channel layer 5, and contains an impurity of a second conductivity type, and a gate electrode 18, which is provided on the p+ type GaAs layer 17. Here, the concentration of hydrogen contained in the p+ type GaAs layer 17 is lower than the concentration of the second conductivity type carrier in the p+ type GaAs layer 17. |
