| 摘要 |
A light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer including a quantum well structure stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness. Alternatively, a light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes 2 or more n-type impurities including Si. |
