发明名称 |
Current control element, memory element, and fabrication method thereof |
摘要 |
A memory element (3) arranged in matrix in a memory device and including a resistance variable element (1) which switches its electrical resistance value in response to a positive or negative electrical pulse applied thereto and retains the switched electrical resistance value; and a current control element (2) for controlling a current flowing when the electrical pulse is applied to the resistance variable element (1); wherein the current control element (2) includes a first electrode; a second electrode; and a current control layer sandwiched between the first electrode and the second electrode; and wherein the current control layer comprises SiNx, and at least one of the first electrode and the second electrode comprises α-tungsten. |
申请公布号 |
US8422268(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US20090677413 |
申请日期 |
2009.05.01 |
申请人 |
ARITA KOJI;MIKAWA TAKUMI;IIJIMA MITSUTERU;OKADA TAKASHI;PANASONIC CORPORATION |
发明人 |
ARITA KOJI;MIKAWA TAKUMI;IIJIMA MITSUTERU;OKADA TAKASHI |
分类号 |
G11C11/34;G11C11/36;H01L29/12 |
主分类号 |
G11C11/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|