METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR HAVING ONE-DIMENSIONAL NANO-STRUCTURE AND THE FIELD EFFECT TRANSISTOR

摘要

PURPOSE: A method for manufacturing a field effect transistor having a one-dimensional nanostructure and the field effect transistor are provided to improve manufacturing efficiency by using a simple process. CONSTITUTION: A silicon nanowire is synthesized on a silicon wafer by performing an electrolyses etching process. The surface of the nanowire is rough. The silicon nanowire is cut down. The silicon nanowire functions as a channel between a source and a drain electrode.