| 摘要 |
A method for depositing a silicon nitride film is provided with a step for setting the pressure in a treatment container (1) within the range of 10-133.3 Pa inclusive in a plasma CVD device (100) which introduces microwaves into the treatment container (1) by a planar antenna (31) comprising multiple holes, and performing plasma CVD by using a deposition gas containing a silicon-containing compound gas and a nitrogen gas while supplying high-frequency power at an output density within the range of 0.009-0.64 W/cm2 inclusive per unit area of a wafer (W) from a high-frequency power source (9) to an electrode (7) in a mounting table (2) on which the wafer (W) is mounted and applying an RF bias to the wafer (W). |
