METHODS FOR FORMING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES FORMED OF THE SAME

摘要

PURPOSE: A method for forming a semiconductor device and the semiconductor device are provided to expose a recess region through an epitaxial layer and to remove a conductive material deposited in the recess region which is formed between an active region and a device isolation pattern. CONSTITUTION: A substrate is loaded in a reaction chamber(S10). First reaction gas is supplied into the reaction chamber(S21). The reaction chamber is firstly purged(S22). Second reaction gas is supplied into the reaction chamber(S23). The reaction chamber is secondly purged(S24). The substrate is unloaded from the reaction chamber(S20). [Reference numerals] (S10) Loading a substrate in a reaction chamber; (S21) Supplying first reaction gas; (S22) Firstly purging; (S23) Supplying second reaction gas; (S24) Secondly purging; (S30) Unloading the substrate from the reaction chamber;