发明名称 |
Integrated circuit system with ultra-low k dielectric and method of manufacture thereof |
摘要 |
A method of manufacturing an integrated circuit system includes: providing a etch stop layer; forming a layer stack over the etch stop layer with the layer stack having an anti-reflective coating layer over a low temperature oxide layer; forming a photoresist layer over the anti-reflective coating layer; forming a first resist line and a second resist line from the photoresist layer with the first resist line and the second resist line separated by a through line pitch on the anti-reflective coating layer; etching the anti-reflective coating layer using a low-pressure polymer burst with a non-oxidizing gas mixture to remove a portion of the anti-reflective coating layer; and forming a first polymer layer over the first resist line. |
申请公布号 |
US8420947(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US20100982363 |
申请日期 |
2010.12.30 |
申请人 |
SRIVASTAVA RAVI PRAKASH;GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
SRIVASTAVA RAVI PRAKASH |
分类号 |
H05K1/03 |
主分类号 |
H05K1/03 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|