发明名称 |
Spacer as hard mask scheme for in-situ doping in CMOS finFETs |
摘要 |
A method of fabricating a semiconductor device that includes at least two fin structures, wherein one of the at least two fin structures include epitaxially formed in-situ doped second source and drain regions having a facetted exterior sidewall that are present on the sidewalls of the fin structure. In another embodiment, the disclosure also provides a method of fabricating a finFET that includes forming a recess in a sidewall of a fin structure, and epitaxially forming an extension dopant region in the recess that is formed in the fin structure. Structures formed by the aforementioned methods are also described. |
申请公布号 |
US8420464(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US201113100589 |
申请日期 |
2011.05.04 |
申请人 |
BASKER VEERARAGHAVAN S.;CHENG KANGGUO;DORIS BRUCE B.;FALTERMEIER JOHNATHAN E.;KANAKASABAPATHY SIVANANDA K.;ADHIKARI HEMANT;INTERNATIONAL BUSINESS MACHINES CORPORATION;GLOBALFOUNDRIES INC. |
发明人 |
BASKER VEERARAGHAVAN S.;CHENG KANGGUO;DORIS BRUCE B.;FALTERMEIER JOHNATHAN E.;KANAKASABAPATHY SIVANANDA K.;ADHIKARI HEMANT |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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