SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

PURPOSE: A semiconductor memory device and an operating method thereof are provided to compensate a source line bouncing phenomenon by controlling the timing of a sensing signal inputted to a page buffer according to a source line voltage level. CONSTITUTION: A memory array includes cell strings which are serially connected to a plurality of memory cells between a bit line and a source line. Page buffers output sensing data by sensing the current change of the bit lines according to a threshold voltage level of a selected memory cell in response to a sensing signal after the bit lines connected to the cell strings are precharged in a sensing operation. A sensing signal generating unit(328) supplies a sensing signal with the compensated timing to the page buffers according to the potential of the source line.