| 摘要 |
PURPOSE: A symmetric plasma processing chamber is provided to offer electric, gas flow and thermal symmetry for controlling plasma uniform and to control gap between an upper electrode and a lower electrode. CONSTITUTION: A plasma processing unit(100) includes a chamber body(142) and a cover assembly(110) surrounding a processing region, a support pedestal arranged in a central region hydraulically sealed from the processing region, a lower electrode supported by the support pedestal, and a substrate support assembly(160) including a first actuation device configured to vertically move the lower electrode by a specific distance while being arranged in the central region. |
