发明名称 |
PHOTOELECTRIC CONVERSION DEVICE |
摘要 |
A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.
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申请公布号 |
US2013087789(A1) |
申请公布日期 |
2013.04.11 |
申请号 |
US201213628458 |
申请日期 |
2012.09.27 |
申请人 |
ENERGY LABORATORY CO., LTD. SEMICONDUCTOR;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HIROSE TAKASHI;KUSUMOTO NAOTO |
分类号 |
H01L31/0376 |
主分类号 |
H01L31/0376 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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