METHODS FOR DEPOSITING A SILICON CONTAINING LAYER WITH ARGON GAS DILUTION
摘要
Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.
申请公布号
WO2013052298(A1)
申请公布日期
2013.04.11
申请号
WO2012US56928
申请日期
2012.09.24
申请人
APPLIED MATERIALS, INC.;WANG, QUNHUA;WANG, WEIJIE;CHOI, YOUNG JIN;CHO, SEON-MEE;CUI, YI;PARK, BEOM SOO;CHOI, SOO YOUNG
发明人
WANG, QUNHUA;WANG, WEIJIE;CHOI, YOUNG JIN;CHO, SEON-MEE;CUI, YI;PARK, BEOM SOO;CHOI, SOO YOUNG