| 摘要 |
Thin films of cadmium sulphide, cadmium selenide or cadmium telluride wherein the stoichiometric ratio of cadmium to sulphur, selenium or tellurium can be adjusted as desired, are produced for use in electronic semi-conductor devices, by evaporating simultaneously but from different sources and preferably, at different temperatures, (i) the cadmium salt or elemental cadmium, and (ii) sulphur, selenium or tellurium to give the dissociated, constitutent elements, controlling the mixing thereof to give the desired composition, and depositing as a thin film on a substrate. The apparatus is characterized by an evaporator including two zones, simultaneously heatable to temperatures at which (i) and (ii) will be evaporated therefrom at predetermined rates, and means to mix the vapours evaporated from the zones.
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