METHOD FOR FORMING PHOTORESIST PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern capable of forming a negative pattern with high resolution.

SOLUTION: A method for forming a resist pattern includes the steps of: (1) forming a resist film by applying a resist composition containing a base component whose solubility to an alkali developing solution is increased by the action of an acid, a photo-base generator component and an acid generator component onto a support medium; (2) subjecting the resist film to exposure without subjecting the resist film to pre-baking; (3) baking after the step (2) and neutralizing a base generated from the photo-base generator component by the exposure and an acid derived from the acid feed component at an exposed portion of the resist film to increase the solubility to an alkali developing solution of the base component by the action of an acid derived from the acid feed component at an unexposed portion of the resist film; and (4) alkali-developing the resist film to form a negative resist pattern in which an unexposed part of the resist film is dissolved and removed.

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