| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering apparatus which does not generate unevenness in film thickness or film quality distribution, and to provide a film deposition method. <P>SOLUTION: The sputtering apparatus 10c has a vacuum tank 11, a substrate holding part 15 for holding a substrate 20, and a target disposed in the vacuum tank 11. The apparatus introduces a sputtering gas into the vacuum tank 11, generates a plasma on the surface of the target and sputters the target to form a thin film on the surface of the substrate 20. Further, the apparatus is provided with a moving unit 40c for moving the target along a carrying path 43' passing through an ignition position 51 outside the outer periphery of the substrate 20 and a film deposition position 52 facing the surface of the substrate 20. When igniting the plasma at the ignition position 51, a film immediately after ignition or a discharge-unstable film is not formed on the substrate 20. <P>COPYRIGHT: (C)2013,JPO&INPIT |
