| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a microlithographic projection exposure apparatus for imaging a mask on a layer using a catoptric projection lens which is configured for wavelengths in the extreme ultraviolet spectral range (EUV). <P>SOLUTION: A microlithographic projection exposure apparatus includes a projection light source (PLS), a heating light source (HLS), a catoptric projection lens (26) and a reflecting switching element (122; 222; 322; 422; 14; 14, 140), which can be preferably arranged outside of the projection lens (26) and displaced between a first position and a second position using a driver (124). In this case, only projection light (PL) can enter the projection lens in the first position of the switching element, and only heating light (HL) can enter the projection lens in the second position of the switching element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
