| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a bump having a flat top shape or a metal film having preferable in-plane uniformity even under the condition of high current density when performing plating of an object to be plated (substrate) such as a semiconductor wafer. <P>SOLUTION: A plating apparatus includes: an anode 26 which is arranged by being immersed in a plating liquid Q in a plating tank 10; a holder 24 which retains an object to be plated W and arranges the same at the position opposite to the anode; a paddle 32 which reciprocally moves in parallel with the object to be plated and agitates the plating liquid; a slit plate 96 for fixing an adjustment plate, which includes a plurality of slit portions extending in the vertical direction at a predetermined pitch; and an adjustment plate 34 which includes an opening for controlling expansion of an electric field, wherein the adjustment plate is attached to the plating tank such that the position of the adjustment plate is adjustable by inserting the side edge portion thereof into an optional slit portion of the slit plate for fixing an adjustment plate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
