PATTERNING PROCESS AND RESIST COMPOSITION USED FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a patterning process for forming hole patterns by positive-negative inversion using a photoresist composition that can achieve high dissolution contrast and control acid diffusion in organic solvent development, and particularly a mask having a lattice pattern formed thereon for forming a hole pattern through a single process of light exposure and development.

SOLUTION: A patterning process is provided, which comprises steps of: applying the following resist composition on a substrate and heating to form a resist film; exposing the resist film with a high-energy beam and heating; and then dissolving an unexposed portion by using a developing solution comprising an organic solvent to obtain a negative pattern in which an exposed portion is not dissolved. The resist composition comprises: a polymeric compound including a repeating unit having a nitrogen atom that is bonded to an acid labile group; an acid generator; and an organic solvent. The resist film shows high solubility of an unexposed portion and low solubility of an exposed portion, that is, a high dissolution contrast, and has an extremely high effect of suppressing acid diffusion, in the process of forming an image by positive negative reversal by development with an organic solvent. A fine hole pattern can be formed with good dimension controllability by exposing the above resist film by use of a mask having a dot pattern or a lattice pattern, and developing the resist film with an organic solvent.

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