MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To improve the film thickness uniformity in a wafer surface.

SOLUTION: A manufacturing method of a semiconductor device includes the steps of: supplying a process gas to a discharge chamber which is defined on an inner peripheral surface of a processing chamber 12, where multiple substrates are laminated and housed, and houses a pair of electrodes therein; applying electric power to the electrode to form plasma thereby activating the process gas. The steps are performed and the substrate is processed using the activated process gas.

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