发明名称 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
摘要 A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.
申请公布号 US2013088915(A1) 申请公布日期 2013.04.11
申请号 US201213475814 申请日期 2012.05.18
申请人 RANJAN RAJIV YADAV;KESHTBOD PARVIZ;MALMHALL ROGER KLAS;AVALANCHE TECHNOLOGY, INC. 发明人 RANJAN RAJIV YADAV;KESHTBOD PARVIZ;MALMHALL ROGER KLAS
分类号 G11C11/14;H01L29/82 主分类号 G11C11/14
代理机构 代理人
主权项
地址