| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a semiconductor chip that has a separation layer for preventing leakage current in reverse bias application on a lateral face, and a manufacturing method of the semiconductor device, which can introduce an impurity for providing a sufficient reverse withstand voltage performance in a short time and achieve reduction of a device pitch and a chip size, and which is suitable for mass production process. <P>SOLUTION: A manufacturing method of a semiconductor device comprises: irradiating laser beams along dicing lines of a wafer to form crack starting points on a surface of the wafer or at a predetermined depth in the wafer; performing segmentation of semiconductor chips by stretching the crack starting points to form a clean dicing surface with less damages such as cracks; and introducing an impurity to the dicing surface to form a separation layer for providing a reverse withstand voltage performance. <P>COPYRIGHT: (C)2013,JPO&INPIT |
