| 发明名称 |
MEMORY DEVICES WITH ENHANCED ISOLATION OF MEMORY CELLS, SYSTEMS INCLUDING SAME AND METHODS OF FORMING SAME |
| 摘要 |
Memory cells of a memory device including a variable resistance material have a cavity between the memory cells. Electronic systems include such memory devices. Methods of forming a memory device include providing a cavity between memory cells of the memory device. |
| 申请公布号 |
EP2481084(A4) |
申请公布日期 |
2013.04.10 |
| 申请号 |
EP20100817684 |
申请日期 |
2010.09.10 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LIU, JUN |
| 分类号 |
G11C13/00;G11C11/56;H01L21/24;H01L27/115;H01L45/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
