发明名称 Method for forming semiconductor thin film and method for manufacturing thin-film semiconductor device
摘要 The present invention provides a method for forming a semiconductor thin film, which is capable of suppressing decrease in mobility due to heating and characteristic deterioration due to the decrease in mobility and which is capable of forming a semiconductor thin film with improved heat resistance by more simple procedures. A solution in which a plurality of types of organic materials including an organic semiconductor material are mixed is applied or printed on a substrate to form a thin film, and the plurality of types of organic materials are phase-separated by a process of drying the thin film. As a result, a layered structure semiconductor thin film is obtained, in which an intermediate layer b composed of an organic insulating material is sandwiched between two semiconductor layers a and a′.
申请公布号 US8415196(B2) 申请公布日期 2013.04.09
申请号 US20080734620 申请日期 2008.12.25
申请人 OHE TAKAHIRO;KIMIJIMA MIKI;SONY CORPORATION 发明人 OHE TAKAHIRO;KIMIJIMA MIKI
分类号 H01L51/40 主分类号 H01L51/40
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