发明名称 |
Semiconductor dynamic quantity sensor and method of manufacturing the same |
摘要 |
A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer. |
申请公布号 |
US8413507(B2) |
申请公布日期 |
2013.04.09 |
申请号 |
US20100801405 |
申请日期 |
2010.06.08 |
申请人 |
FUJII TETSUO;YOKURA HISANORI;HIGUCHI HIROFUMI;DENSO CORPORATION |
发明人 |
FUJII TETSUO;YOKURA HISANORI;HIGUCHI HIROFUMI |
分类号 |
G01C19/56;G01P15/125 |
主分类号 |
G01C19/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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