NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A nitride semiconductor device and a manufacturing method thereof are provided to reduce the on-resistance by partially forming a p-type nitride semiconductor layer on a nitride semiconductor layer structure. CONSTITUTION: A source electrode(50) is ohmically contacted to a nitride semiconductor layer(30). A drain electrode(60) is separated from the source electrode and is ohmically contacted to the nitride semiconductor layer. A plurality of p-type nitride semiconductor segments(80) are formed on the nitride semiconductor layer. A gate electrode(70) is formed near the source electrode. The gate electrode is contacted to the p-type nitride semiconductor segment.