发明名称 Integrated circuits on a wafer and method for separating integrated circuits on a wafer
摘要 Integrated circuits (1) on a wafer comprise a wafer substrate (2) and a structure applied on a surface (4) of the wafer substrate (2). The structure forms a plurality of integrated circuits (1) formed on the wafer substrate (2) and the integrated circuits (1) are separated by saw lines (6, 7). The structure comprises a plurality of superposed layers (9a-9e) formed on the wafer substrate (2) and a top layer (10) formed on the superposed layers (9a-9e). The integrated circuit (1) on the wafer further comprise a plurality of alignment marks (3) intended for aligning a separating device (18) for separating the integrated circuits (1) on the wafer into individual integrated circuits (1) during a separation process, wherein the alignment marks (3) are formed from at least one of the superposed layers (9a-9e).
申请公布号 US8415769(B2) 申请公布日期 2013.04.09
申请号 US20080668482 申请日期 2008.07.10
申请人 SCHEUCHER HEIMO;ALBERMANN GUIDO;CECCARELLI DAVID;NXP B.V. 发明人 SCHEUCHER HEIMO;ALBERMANN GUIDO;CECCARELLI DAVID
分类号 H01L23/544;H01L21/78 主分类号 H01L23/544
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