NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A nitride semiconductor device and a manufacturing method thereof are provided to prevent a gate leakage current by implementing a normally-off property. CONSTITUTION: A source electrode(50) is ohmically contacted to a nitride semiconductor layer(30). A drain electrode(60) is separated from the source electrode and is ohmically contacted to the nitride semiconductor layer. A P-type nitride layer(40) is separated from the source electrode and the drain electrode. An N-type nitride layer(140) is formed on the P-type nitride layer. A gate electrode(70) is contacted to the N-type nitride layer.