发明名称 |
Transmission gate-based spin-transfer torque memory unit |
摘要 |
A transmission gate-based spin-transfer torque memory unit is described. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. A NMOS transistor is in parallel electrical connection with a PMOS transistor and they are electrically connected with the source line and the magnetic tunnel junction data cell. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. The PMOS transistor and the NMOS transistor are separately addressable so that a first write current in a first direction flows through the PMOS transistor and a second write current in a second direction flows through the NMOS transistor.
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申请公布号 |
US8416615(B2) |
申请公布日期 |
2013.04.09 |
申请号 |
US201213474839 |
申请日期 |
2012.05.18 |
申请人 |
CHEN YIRAN;LI HAI;LIU HONGYUE;LU YONG;LI YANG;SEAGATE TECHNOLOGY LLC |
发明人 |
CHEN YIRAN;LI HAI;LIU HONGYUE;LU YONG;LI YANG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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