| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent an on-resistance rise by using a metal insulator semiconductor structure. CONSTITUTION: An insertion metal layer(4) is contacted with a surface of a semiconductor laminate structure(2). A gate insulating layer(7) is formed on the insertion metal layer. A gate electrode(8) is formed by interposing the gate insulating layer. An insulation layer is formed on a first conductive layer. A second conductive layer is formed by interposing the insulation layer. [Reference numerals] (1) Substrate; (2a) Buffer; (7a,7b) Opening; (8) Gate electrode;
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