SEMICONDUCTOR DEVICE AND FABRICATION METHOD

摘要

PURPOSE: A semiconductor device and a fabrication method are provided to remove an electron of 2DEG under a gate electrode and to secure high uniform normally-off operation. CONSTITUTION: A first substrate(11), a second semiconductor layer(15), and a semiconductor cap layer(16) containing a p-type impurity element are successively formed on a semiconductor layer(14). The semiconductor cap layer is formed. A dielectric layer(21) having an opening part is formed. A third semiconductor layer(17) containing the p-type impurity element is formed on the semiconductor cap layer exposed by the opening part. A gate electrode(31) is formed on the third semiconductor layer. An insulating layer(22) is formed between the third semiconductor layer and the gate electrode. A source electrode(32) and a drain electrode(33) are formed in order to touch an electron supply layer. [Reference numerals] (AA) Structural diagram of a semiconductor device to a first embodiment;