| 摘要 |
A variable resistance nonvolatile memory element manufacturing method includes: forming a first electrode on a substrate; forming a first metal oxide layer having a predetermined oxygen content atomic percentage on the first electrode; forming, in at least one part of the first metal oxide layer, a modified layer higher in resistance than the first metal oxide layer, by oxygen deficiency reduction; forming a second metal oxide layer lower in oxygen content atomic percentage than the first metal oxide layer, on the modified layer; and forming a second electrode on the second metal oxide layer. A variable resistance layer includes the first metal oxide layer having the modified layer and the second metal oxide layer, connects to the first electrode and the second electrode, and changes between high and low resistance states according to electrical pulse polarity.
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