发明名称 |
SUPERJUNCTION STRUCTURE, SUPERJUNCTION MOS TRANSISTOR AND MANUFACTURING METHOD THEREOF |
摘要 |
A superjunction structure with unevenly doped P-type pillars (4) and N-type pillars (2a) is disclosed. The N-type pillars (2a) have uneven impurity concentrations in the vertical direction and the P-type pillars (4) have two or more impurity concentrations distributed both in the vertical and lateral directions to ensure that the total quantity of P-type impurities in the P-type pillars (4) close to the substrate (8) is less than that of N-type impurities in the N-type pillars close to the substrate; the total quantity of P-type impurities in the P-type pillars close to the top of the device is greater than that of N-type impurities in the N-type pillars close to the top. A superjunction MOS transistor and manufacturing method of the same are also disclosed. The superjunction structure can improve the capability of sustaining current-surge of a device without affecting or may even reduce the on-resistance of the device.
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申请公布号 |
US2013082323(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
US201213608491 |
申请日期 |
2012.09.10 |
申请人 |
XIAO SHENGAN;SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD. |
发明人 |
XIAO SHENGAN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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