METHOD FOR FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE USING DIRECTED SELF ASSEMBLY PROCESS

摘要

A method for forming fine patterns of a semiconductor device, which can form patterns having a size of pattern line width of 20nm or less without a bulk exposure and hardening process for a guide pattern, includes: an (a) step of forming a photoresist layer on a substrate having an organic anti-reflection layer; a (b) step of forming a guide pattern by exposing the photoresist layer and developing the exposed photoresist layer using a negative tone developer; (c) step of forming a self assembly conductive layer on the substrate having the guide pattern; a (d) step of forming the self assembly conductive layer by removing the guide pattern using the developer; an (e) step of coating a block copolymer as a directed self assembly (DSA) material on the substrate coated with the self assembly conductive layer from which the guide pattern is removed, and forming self-assembled patterns by heating the block copolymer at the glass transition temperature or higher; and a (f) step of forming the fine patterns by selectively etching a part having a low resistance against the etching (or having a high etching speed) among the self-assembled patterns using O2 plasma.