| 摘要 |
Provided is substrate processing apparatus including processing chamber that dries substrate W using high temperature and high pressure fluid, raw material accommodating unit that accommodates raw material in liquid state, and supplying unit that supplies the high temperature and high pressure fluid to the processing chamber. The supplying unit includes sealable outer vessel connected to the processing chamber and the raw material accommodating unit, and inner vessel provided within the outer vessel and configured to receive the raw material. The inner vessel is provided with opened holes portions configured to drop down the raw material toward a portion of the outer vessel to be heated. After the raw material is accommodated in the inner vessel, the raw material is contacted with the portion to be heated and then heated. A high temperature and high pressure fluid is then obtained and supplied to the processing chamber.
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