| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a top-gate semiconductor element having a short channel length L and capable of microfabrication and using an oxide semiconductor, and provide a manufacturing method of the semiconductor element. <P>SOLUTION: A semiconductor element comprises: an oxide semiconductor layer on an insulation surface; a source electrode layer and a drain electrode layer on the oxide semiconductor layer; gate insulation layers on the oxide semiconductor layer, the source electrode layer and the drain electrode layer; and a gate electrode layer on the gate insulation layer. The source electrode layer and the drain electrode layer have lateral walls, respectively, and the lateral walls contact a top face of the oxide semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
