NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a plurality of p-type nitride semiconductor segments formed on the nitride semiconductor layer and each formed lengthways from a first sidewall thereof, which is spaced apart from the source electrode, to a drain side; and a gate electrode formed to be close to the source electrode and in contact with the nitride semiconductor layer between the plurality of p-type semiconductor segments and portions of the p-type semiconductor segments extending in the direction of a source-side sidewall of the gate electrode aligned with the first sidewalls of the p-type nitride semiconductor segments is provided.