发明名称 |
MAGNETRON SPUTTERING APPARATUS AND METHOD |
摘要 |
A magnetron sputtering apparatus in which a target is disposed to face a substrate includes a magnet array body including a magnet group arranged on a base body, and a rotating mechanism for rotating the magnet array body around an axis perpendicular to the substrate. In the magnet array body, N poles and S poles constituting the magnet group are arranged to be spaced from each other along a surface facing the target such that a plasma is generated based on a drift of electrons by a cusp magnetic field. Magnets located on the outermost periphery of the magnet group are arranged in a line to prevent the electrons from being released from constraint of the cusp magnetic field and jumping out of the cusp magnetic field. A distance between the target and the substrate during sputtering is equal to or less than 30 mm.
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申请公布号 |
US2013081938(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
US201213630629 |
申请日期 |
2012.09.28 |
申请人 |
MIZUNO SHIGERU;TOSHIMA HIROYUKI;GOMI ATSUSHI;MIYASHITA TETSUYA;HATANO TATSUO;MIZUSAWA YASUSHI |
发明人 |
MIZUNO SHIGERU;TOSHIMA HIROYUKI;GOMI ATSUSHI;MIYASHITA TETSUYA;HATANO TATSUO;MIZUSAWA YASUSHI |
分类号 |
C23C14/35 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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